The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Oct. 31, 2007
Praburam Gopalraja, San Jose, CA (US);
Jianming Fu, Palo Alto, CA (US);
Xianmin Tang, San Jose, CA (US);
John C. Forster, San Francisco, CA (US);
Umesh Kelkar, Santa Clara, CA (US);
Praburam Gopalraja, San Jose, CA (US);
Jianming Fu, Palo Alto, CA (US);
Xianmin Tang, San Jose, CA (US);
John C. Forster, San Francisco, CA (US);
Umesh Kelkar, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.