The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Mar. 14, 2013
Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Takashi Noguchi, Naka, JP;

Toshihiro Doi, Naka, JP;

Hideaki Sakurai, Naka, JP;

Toshiaki Watanabe, Sanda, JP;

Nobuyuki Soyama, Naka, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/06 (2006.01); H01L 41/187 (2006.01); H01G 4/12 (2006.01); H01L 49/02 (2006.01); H01L 37/02 (2006.01); H01L 41/08 (2006.01); H03H 9/02 (2006.01); H01G 4/018 (2006.01); H01L 41/318 (2013.01); H01L 41/319 (2013.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 41/1876 (2013.01); Y10T 428/24975 (2015.01); Y10T 428/265 (2015.01); H01G 4/1245 (2013.01); H01L 28/56 (2013.01); H01L 37/025 (2013.01); H01L 41/0815 (2013.01); H03H 9/02031 (2013.01); H01G 4/018 (2013.01); H01L 41/318 (2013.01); H01L 41/319 (2013.01); H01L 29/78391 (2014.09);
Abstract

A PZT-based ferroelectric thin film formed on a lower electrode of a substrate having the lower electrode in which the crystal plane is oriented in a (111) axis direction, having an orientation controlling layer which is formed on the lower electrode and has a layer thickness in which a crystal orientation is controlled in a (111) plane preferentially in a range of 45 nm to 270 nm, and a film thickness adjusting layer which is formed on the orientation controlling layer and has the same crystal orientation as the crystal orientation of the orientation controlling layer, in which an interface is formed between the orientation controlling layer and the film thickness adjusting layer.


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