The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Oct. 03, 2011
Michael P. Chudzik, Danbury, CT (US);
Deleep R. Nair, Fishkill, NY (US);
Vijay Narayanan, New York, NY (US);
Carl J. Radens, LaGrangeville, NY (US);
Jay M. Shah, Poughkeepsie, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Deleep R. Nair, Fishkill, NY (US);
Vijay Narayanan, New York, NY (US);
Carl J. Radens, LaGrangeville, NY (US);
Jay M. Shah, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
At least one layer including a scavenging material and a dielectric material is deposited over a gate stack, and is subsequently anisotropically etched to form a oxygen-scavenging-material-including gate spacer. The oxygen-scavenging-material-including gate spacer can be a scavenging-nanoparticle-including gate spacer or a scavenging-island-including gate spacer. The scavenging material is distributed within the oxygen-scavenging-material-including gate spacer in a manner that prevents an electrical short between a gate electrode and a semiconductor material underlying a gate dielectric. The scavenging material actively scavenges oxygen that diffuses toward the gate dielectric from above, or from the outside of, a dielectric gate spacer that can be formed around the oxygen-scavenging-material-including gate spacer.