The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Dec. 23, 2013
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chien-Hsuan Liu, Tainan, TW;

Chao-Chi Chen, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 23/367 (2006.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01); H01L 23/373 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 23/367 (2013.01); H01L 27/088 (2013.01); H01L 28/20 (2013.01); H01L 29/0649 (2013.01); H01L 23/3731 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/324 (2013.01); H01L 21/823481 (2013.01);
Abstract

Embodiments of mechanisms for forming a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate having a first device region and a second device region. The semiconductor device structure further includes first devices in the first device region and second devices in the second device region. The semiconductor device structure also includes a first annular structure continuously surrounding the first device region and a second annular structure continuously surrounding the second device region. The first annular structure has a first thermal diffusion coefficient less than a second thermal diffusion coefficient of the second annular structure.


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