The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Oct. 04, 2011
Applicants:
Amit Jain, Mountain View, CA (US);
Qian Fu, Pleasanton, CA (US);
Wonchul Lee, San Ramon, CA (US);
Inventors:
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/311 (2006.01); H01L 21/302 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); H01L 21/31122 (2013.01); H01L 21/32137 (2013.01);
Abstract
A method for etching features into an etch layer through a patterned mask in a plasma processing chamber is provided. A main etch gas is flowed into the plasma processing chamber. The main etch gas is formed into a main etch plasma. A bias greater than 600 volts is provided. The bias is pulsed at a frequency between 1 Hz and 20 kHz with a duty cycle less than 45%.