The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Aug. 24, 2012
Applicants:
Chun Ling Chiang, Hsinchu, TW;
Chun Ming Cheng, Hsinchu, TW;
Kuang Chao Chen, Taipei, TW;
Inventors:
Assignee:
Macronix International Co., Ltd., Hsin-chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28167 (2013.01); H01L 21/28273 (2013.01); H01L 29/42324 (2013.01);
Abstract
A semiconductor gate structure is provided having a trench, the trench assembled by a dielectric structure and a stack structure. A first conductive layer may be conformally applied to the dielectric structure and the stack structure. An oxide layer is formed along the first conductive layer and may then be substantially removed from the first conductive layer. In certain gate structures, a conductive fill structure having the first conductive layer and a second conductive layer may be disposed on the stack structure and the dielectric structure.