The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Sep. 19, 2011
Applicants:

Yun-seok Choi, Hwaseong-si, KR;

So-young Lim, Hwaseong-si, KR;

In-won O, Jeonbuk, KR;

Inventors:

Yun-seok Choi, Hwaseong-si, KR;

So-young Lim, Hwaseong-si, KR;

In-won O, Jeonbuk, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 23/14 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 23/147 (2013.01); H01L 21/486 (2013.01); H01L 23/49827 (2013.01); H01L 25/0655 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/19105 (2013.01); H01L 2224/16225 (2013.01);
Abstract

A semiconductor device includes an interposer mounting a semiconductor chip. The interposer includes a silicon substrate having a recessed region formed on a first surface, a first through via penetrating a first region of the silicon substrate from the first surface to an opposing second surface, an insulator disposed in the recessed region, and a first wire pattern at least partially disposed on the insulator and electrically connecting the first through via to the semiconductor chip.


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