The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Mar. 03, 2014
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Shahid A. Butt, Ossining, NY (US);
Robert C. Wong, Poughkeepsie, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/823431 (2013.01); H01L 27/1211 (2013.01); H01L 21/845 (2013.01);
Abstract
A method for forming a field effect transistor device includes patterning an arrangement of fin portions on a substrate, patterning a gate stack portion over portions of the fin portions and the substrate, growing an epitaxial material from the fin portions that electrically connects portions of adjacent fin structures, and removing a portion of the gate stack portion to expose a portion of the substrate.