The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Nov. 11, 2011
Applicants:

Hiroshi Goto, Takasago, JP;

Yuki Iwasaki, Takasago, JP;

Masaya Ehira, Takasago, JP;

Yoichiro Yoneda, Takasago, JP;

Inventors:

Hiroshi Goto, Takasago, JP;

Yuki Iwasaki, Takasago, JP;

Masaya Ehira, Takasago, JP;

Yoichiro Yoneda, Takasago, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/08 (2006.01); C04B 35/453 (2006.01); C04B 35/457 (2006.01); C04B 35/626 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
H01B 1/08 (2013.01); C04B 35/453 (2013.01); C04B 35/457 (2013.01); C04B 35/6261 (2013.01); C04B 35/62695 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/80 (2013.01); C23C 14/086 (2013.01); C23C 14/3414 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6585 (2013.01); C04B 2235/77 (2013.01);
Abstract

This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a ZnSnOphase as the main phase and contains an In/InO—ZnSnOsolid solution wherein In and/or InOis solid-solved in ZnSnO, but a ZnInOphase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.


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