The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Apr. 03, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/20 (2006.01); H01L 21/28 (2006.01); B81C 1/00 (2006.01); G01P 15/125 (2006.01); H01G 5/18 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00158 (2013.01); G01P 15/125 (2013.01); H01L 28/60 (2013.01); H01G 5/18 (2013.01);
Abstract
A device includes a semiconductor substrate, and a capacitive sensor having a back-plate, wherein the back-plate forms a first capacitor plate of the capacitive sensor. The back-plate is a portion of the semiconductor substrate. A conductive membrane is spaced apart from the semiconductor substrate by an air-gap. A capacitance of the capacitive sensor is configured to change in response to a movement of the polysilicon membrane.