The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9055703 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 09, 2015

Filed:

Oct. 01, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Mukta G. Farooq, Hopewell Junction, NY (US);

John A. Fitzsimmons, Poughkeepsie, NY (US);

Troy L. Graves-Abe, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 3/42 (2006.01); H01L 23/48 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H05K 3/423 (2013.01); Y10T 428/12764 (2015.01); H01L 23/481 (2013.01); H01L 23/53238 (2013.01); H01L 23/53209 (2013.01); H01L 23/53214 (2013.01); H01L 23/53242 (2013.01); H01L 23/53257 (2013.01); H01L 21/76898 (2013.01); H01L 21/76844 (2013.01); H01L 21/76846 (2013.01); H01L 21/76858 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A structure including a seed layer located directly on top of and conformal to the diffusion barrier, wherein the seed layer is parallel to the sidewall and bottom of the opening, the seed layer comprises a crystalline structure suitable for plating copper; a first intermetallic compound and an alloy layer parallel to the sidewall of the opening and separating the seed layer from the conductive material, the first intermetallic compound is a precipitate within a solid solution of an alloying material of the alloy layer and the conductive material, and is molecularly bound to both the alloy layer and the conductive material, and a first high friction interface located between the seed layer and the alloy layer extending in a direction parallel to the sidewall of the opening, wherein the first high friction interface results in a mechanical bond between the seed layer and the alloy layer.


Find Patent Forward Citations

Farooq, Mukta. (2015). Sidewalls of electroplated copper interconnects (U.S. Patent No. 9055703). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9055703

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…