The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Oct. 19, 2012
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Hsin-Liang Chen, Taipei, TW;
Shuo-Lun Tu, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01); H02H 7/09 (2006.01); H02H 9/04 (2006.01); H01L 27/02 (2006.01); H01L 29/74 (2006.01);
U.S. Cl.
CPC ...
H02H 7/09 (2013.01); H02H 9/04 (2013.01); H01L 27/0262 (2013.01); H01L 29/7436 (2013.01);
Abstract
A bi-directional electrostatic discharge (ESD) protection device may include a substrate, an N+ doped buried layer, an N-type well region and two P-type well regions. The N+ doped buried layer may be disposed proximate to the substrate. The N-type well region may encompass the two P-type well regions such that a portion of the N-type well region is interposed between the two P-type well regions. The P-type well regions may be disposed proximate to the N+ doped buried layer and comprise one or more N+ doped plates and one or more P+ doped plates.