The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Mar. 08, 2013
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Seung Yun Lee, Icheon-si, KR;
Hae Chan Park, Icheon-si, KR;
Myoung Sub Kim, Icheon-si, KR;
Sung Bin Hong, Icheon-si, KR;
Se Ho Lee, Icheon-si, KR;
Jung Won Seo, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 45/16 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/1293 (2013.01); H01L 45/1683 (2013.01); H01L 27/2409 (2013.01);
Abstract
A resistive memory device capable of preventing disturbance is provided. The resistive memory device includes a lower electrode formed on a semiconductor substrate, a variable resistor disposed on the lower electrode, an upper electrode disposed on the variable resistor, and an interlayer insulating layer configured to insulate the variable resistor. The interlayer insulating layer may include an air-gap area in at least a portion thereof.