The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Jun. 06, 2014
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Suk Won Jung, Goyang-si, KR;
Byeong Hoon Cho, Seoul, KR;
Sung Hoon Yang, Seoul, KR;
Woong Kwon Kim, Cheonan-si, KR;
Sang Youn Han, Seoul, KR;
Dae Cheol Kim, Hwaseong-si, KR;
Ki-Hun Jeong, Cheongan-si, KR;
Kyung-Sook Jeon, Yongin-si, KR;
Seung Mi Seo, Seoul, KR;
Jung-Suk Bang, Guri-si, KR;
Kun-Wook Han, Seongnam-si, KR;
SAMSUNG DISPLAY CO., LTD., , KR;
Abstract
An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.