The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Jan. 06, 2014
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Jin-Bum Kim, Seoul, KR;
Taek-Soo Jeon, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device is provided. An active fin protrudes from a substrate. A gate structure is formed on the substrate and the active fin. The gate structure extends in a first direction. The gate structure crosses a first region of the active fin in a second direction. A first epitaxial layer is formed on a second region of the active fin. The second region of the active fin is not covered with the gate structure. A second epitaxial layer is formed on the first epitaxial layer, the second epitaxial layer including an impurity. The first epitaxial layer includes a blocking material. The blocking material of the first epitaxial layer prevents the impurity of the second epitaxial layer from passing through the first epitaxial layer to block diffusion of the impurity to a channel region formed in the first region of the active fin.