The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Feb. 08, 2013
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

David Gerald Farber, Plano, TX (US);

Tom Lii, Plano, TX (US);

Steve Lytle, McKinney, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76804 (2013.01);
Abstract

The width of a metal contact opening is formed to be smaller than the minimum feature size of a photolithographically-defined opening. The method forms the metal contact opening by first etching the fourth layer of a multilayered hard mask structure to have a number of trenches that expose the third layer of the multilayered hard mask structure. Following this, the third, second, and first layers of the multilayered hard mask structure are selectively etched to expose uncovered regions on the top surface of an isolation layer that touches and lies over a source region and a drain region. The uncovered regions on the top surface of the isolation layer are then etched to form the metal contact openings.


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