The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Oct. 25, 2011
Applicants:
Jeng-hsing Jang, Taoyuan County, TW;
Yi-nan Chen, Taoyuan County, TW;
Hsien-wen Liu, Taoyuan County, TW;
Inventors:
Jeng-Hsing Jang, Taoyuan County, TW;
Yi-Nan Chen, Taoyuan County, TW;
Hsien-Wen Liu, Taoyuan County, TW;
Assignee:
Nanya Technology Corporation, Taoyuan, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66666 (2013.01); H01L 21/823487 (2013.01); H01L 27/0266 (2013.01); H01L 29/4238 (2013.01); H01L 29/7827 (2013.01); H01L 29/0692 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A vertical MOSFET electrostatic discharge device is disclosed, including a substrate comprising a plurality of trenches, a recessed gate disposed in each trench, a drain region disposed between each of the two neighboring recessed gates, an electrostatic discharge implant region disposed under each drain region, and a source region surrounding and disposed under the recessed gates and the electrostatic discharge implant regions.