The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Oct. 05, 2010
Applicants:

Soichi Kumon, Matsusaka, JP;

Takashi Saio, Suzuka, JP;

Shinobu Arata, Matsusaka, JP;

Hidehisa Nanai, Tokyo, JP;

Yoshinori Akamatsu, Matsusaka, JP;

Shigeo Hamaguchi, Matsusaka, JP;

Kazuhiko Maeda, Tokyo, JP;

Inventors:

Soichi Kumon, Matsusaka, JP;

Takashi Saio, Suzuka, JP;

Shinobu Arata, Matsusaka, JP;

Hidehisa Nanai, Tokyo, JP;

Yoshinori Akamatsu, Matsusaka, JP;

Shigeo Hamaguchi, Matsusaka, JP;

Kazuhiko Maeda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B08B 3/00 (2006.01); C11D 3/16 (2006.01); C11D 7/50 (2006.01); H01L 21/00 (2006.01); C09D 183/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02052 (2013.01); C09D 183/04 (2013.01); B08B 3/00 (2013.01); C11D 3/162 (2013.01); C11D 7/5022 (2013.01); H01L 21/00 (2013.01); H01L 21/02054 (2013.01);
Abstract

A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.


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