The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Apr. 04, 2012
Applicants:
Chun-lin Chang, Jhubei, TW;
Chih-hong Hwang, New Taipei, TW;
Wen-yu Ku, Hsinchu, TW;
Chi-ming Yang, Hsinchu, TW;
Chin-hsiang Lin, Hsin-Chu, TW;
Inventors:
Chun-Lin Chang, Jhubei, TW;
Chih-Hong Hwang, New Taipei, TW;
Wen-Yu Ku, Hsinchu, TW;
Chi-Ming Yang, Hsinchu, TW;
Chin-Hsiang Lin, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A61N 5/00 (2006.01); G21G 5/00 (2006.01); H01J 37/317 (2006.01); G21K 1/14 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); A61N 5/00 (2013.01); G21G 5/00 (2013.01); G21K 1/14 (2013.01); H01J 2237/0044 (2013.01);
Abstract
An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.