The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Jan. 20, 2012
Tetsuhiro Tanaka, Kanagawa, JP;
Takashi Ienaga, Kanagawa, JP;
Ryu Komatsu, Kanagawa, JP;
Erika Kato, Kanagawa, JP;
Ryota Tajima, Kanagawa, JP;
Yasuhiro Jinbo, Kanagawa, JP;
Tetsuhiro Tanaka, Kanagawa, JP;
Takashi Ienaga, Kanagawa, JP;
Ryu Komatsu, Kanagawa, JP;
Erika Kato, Kanagawa, JP;
Ryota Tajima, Kanagawa, JP;
Yasuhiro Jinbo, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
An embodiment of the present invention is a microcrystalline semiconductor film having a thickness of more than or equal to 70 nm and less than or equal to 100 nm and including a crystal grain partly projecting from a surface of the microcrystalline semiconductor film. The crystal grain has an orientation plane and includes a crystallite having a size of 13 nm or more. Further, the film density of the microcrystalline semiconductor film is higher than or equal to 2.25 g/cmand lower than or equal to 2.35 g/cm, preferably higher than or equal to 2.30 g/cmand lower than or equal to 2.33 g/cm.