The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Feb. 18, 2014
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Michiya Yamada, Hino, JP;
Tatsuhiko Fujihira, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., , JP;
Abstract
A method of manufacturing a super-junction semiconductor device is disclosed that allows forming a high concentration layer with high precision and improves the trade-off relationship between the Eoff and the dV/dt. The method comprises a step of forming a parallel pn layer and a step of forming a proton irradiated layer in the upper region of the pn layer. Then, heat treatment is conducted on the proton irradiated layer for transforming the protons into donors to form a high concentration n type semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile