The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Jul. 16, 2012
Hyung-su Jeong, Suwon-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Nam-young Lee, Hwaseong-si, KR;
Ji-hoon Lee, Yeongcheon-si, KR;
Min-kwon Cho, Hwaseong-si, KR;
Yong-cheol Choi, Paju-si, KR;
Hyuk-soon Choi, Hwaseong-si, KR;
Hyung-su Jeong, Suwon-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Nam-young Lee, Hwaseong-si, KR;
Ji-hoon Lee, Yeongcheon-si, KR;
Min-kwon Cho, Hwaseong-si, KR;
Yong-cheol Choi, Paju-si, KR;
Hyuk-soon Choi, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A transistor includes a device portion and a collector layer. The device portion is in a first side of a semiconductor substrate, and includes a gate and an emitter. The collector layer is on a second side of the semiconductor substrate, which is opposite to the first side. The collector layer is an impurity-doped epitaxial layer and has a doping profile with a non-normal distribution.