The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Sep. 10, 2010
Applicants:
Kuo Bin Huang, Jhubei, TW;
Hsin-chien LU, Tucheng, TW;
Ryan Chia-jen Chen, Chiayi, TW;
Chi-ming Yang, Hsian-San District, TW;
Chyi Shyuan Chern, Taipei, TW;
Chin-hsiang Lin, Hsinchu, TW;
Inventors:
Kuo Bin Huang, Jhubei, TW;
Hsin-Chien Lu, Tucheng, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
Chi-Ming Yang, Hsian-San District, TW;
Chyi Shyuan Chern, Taipei, TW;
Chin-Hsiang Lin, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28238 (2013.01); H01L 21/02071 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01);
Abstract
A method for forming an integrated circuit is provided. The method includes forming a gate dielectric structure over a substrate. A titanium-containing sacrificial layer is formed, contacting the gate dielectric structure. The whole titanium-containing sacrificial layer is substantially removed.