The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Jan. 27, 2010
Hisanori Suzuki, Hamamatsu, JP;
Yasuhito Yoneta, Hamamatsu, JP;
Shin-ichiro Takagi, Hamamatsu, JP;
Kentaro Maeta, Hamamatsu, JP;
Masaharu Muramatsu, Hamamatsu, JP;
Hisanori Suzuki, Hamamatsu, JP;
Yasuhito Yoneta, Hamamatsu, JP;
Shin-ichiro Takagi, Hamamatsu, JP;
Kentaro Maeta, Hamamatsu, JP;
Masaharu Muramatsu, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A solid state imaging device includes a P-type semiconductor substrateA, a P-type epitaxial layerB grown on the semiconductor substrateA, an imaging region VR grown within the epitaxial layerB, and an N-type semiconductor regionC grown within the epitaxial layerB. The solid state imaging device further includes a horizontal shift register HR that transmits a signal from the imaging region VR, and a P-type well regionD formed within the epitaxial layerB. The N-type semiconductor regionC extends in the well regionD. A P-type impurity concentration in the well regionD is higher than a P-type impurity concentration in the epitaxial layerB. A multiplication register EM that multiplies electrons from the horizontal shift register HR is formed in the well regionD.