The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

Mar. 17, 2014
Applicant:

Sandisk 3d Llc, Milpitas, CA (US);

Inventors:

Jingyan Zhang, Santa Clara, CA (US);

Utthaman Thirunavukkarasu, San Jose, CA (US);

April D Schricker, Palo Alto, CA (US);

Assignee:

SanDisk 3D LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); B82Y 10/00 (2011.01); G11C 13/02 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); B82Y 10/00 (2013.01); G11C 13/0002 (2013.01); G11C 13/0007 (2013.01); G11C 13/0064 (2013.01); G11C 13/025 (2013.01); G11C 2013/0073 (2013.01); G11C 2213/35 (2013.01); G11C 2213/52 (2013.01); G11C 2213/54 (2013.01); G11C 2213/55 (2013.01); G11C 2213/71 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/149 (2013.01); H01L 45/1608 (2013.01); H01L 45/1675 (2013.01); H01L 27/2409 (2013.01); H01L 27/2481 (2013.01);
Abstract

A reversible resistance-switching metal-insulator-metal (MIM) stack is provided which can be set to a low resistance state with a first polarity signal and reset to a higher resistance state with a second polarity signal. The first polarity signal is opposite in polarity than the second polarity signal. In one approach, the MIM stack includes a carbon-based reversible resistivity switching material such as a carbon nanotube material. The MIM stack can further include one or more additional reversible resistivity switching materials such as metal oxide above and/or below the carbon-based reversible resistivity switching material. In another approach, a metal oxide layer is between separate layers of carbon-based reversible resistivity switching material.


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