The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

Dec. 17, 2013
Applicant:

Kla-tencor Corporation, Milpitas, CA (US);

Inventors:

Damon Kvamme, Los Gatos, CA (US);

Yanming Zhao, Milpitas, CA (US);

Assignee:

KLA-Tencor Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 5/02 (2006.01); G02B 5/10 (2006.01); F21V 7/09 (2006.01); G01N 21/95 (2006.01); G02B 27/09 (2006.01); G02B 17/06 (2006.01); G02B 5/08 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); G02B 27/0988 (2013.01); G02B 17/0621 (2013.01); G02B 5/0891 (2013.01); G02B 27/0994 (2013.01);
Abstract

An apparatus for focusing light in a semi-conductor inspection system, including: a first mirror arranged to reflect extreme ultra-violet (EUV) generated by a plasma source; and a second mirror arranged to focus the EUV light, reflected from the first mirror, onto a first intermediate focus plane. A homogenizing tunnel, including: a first aperture having a first shape and a first size and arranged to receive extreme ultra-violet (EUV) light; a second aperture having a second shape and a second size; and a passageway connecting the first and second apertures and arranged to homogenize the EUV light received by the first aperture. The first shape is different from the second shape or the first size is different from the second size.


Find Patent Forward Citations

Loading…