The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Jun. 13, 2013
Skyworks Solutions, Inc., Woburn, MA (US);
Howard E. Chen, Anaheim, CA (US);
Yifan Guo, Irvine, CA (US);
Dinhphuoc Vu Hoang, Anaheim, CA (US);
Mehran Janani, Oak Park, CA (US);
Tin Myint Ko, Newbury Park, CA (US);
Philip John Lehtola, Cedar Rapids, IA (US);
Anthony James LoBianco, Irvine, CA (US);
Hardik Bhupendra Modi, Irvine, CA (US);
Hoang Mong Nguyen, Fountain Valley, CA (US);
Matthew Thomas Ozalas, Novato, CA (US);
Sandra Louise Petty-Weeks, Newport Beach, CA (US);
Matthew Sean Read, Rancho Santa Margarita, CA (US);
Jens Albrecht Riege, Ojai, CA (US);
David Steven Ripley, Marion, IA (US);
Hongxiao Shao, Thousand Oaks, CA (US);
Hong Shen, Oak Park, CA (US);
Weimin Sun, Santa Rosa Valley, CA (US);
Hsiang-Chih Sun, Thousand Oaks, CA (US);
Patrick Lawrence Welch, Campbell, CA (US);
Peter J. Zampardi, Jr., Newbury Park, CA (US);
Guohao Zhang, Nanjing, CN;
Skyworks Solutions, Inc., Woburn, MA (US);
Abstract
A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×10cmat a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.