The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Feb. 23, 2012
Clement Hsingjen Wann, Carmel, NY (US);
Ling-yen Yeh, Hsinchu, TW;
Chi-yuan Shih, Hsinchu, TW;
Yuan-fu Shao, Taipei, TW;
Wen-huei Guo, Chu-bei, TW;
Tung Ying Lee, Hsinchu, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Ling-Yen Yeh, Hsinchu, TW;
Chi-Yuan Shih, Hsinchu, TW;
Yuan-Fu Shao, Taipei, TW;
Wen-Huei Guo, Chu-bei, TW;
Tung Ying Lee, Hsinchu, TW;
Abstract
A semiconductor apparatus includes fin field-effect transistor (FinFETs) having controlled fin heights. The apparatus includes a high fin density area and a low fin density area. Each fin density area includes fins and dielectric material between the fins. The dielectric material includes different dopant concentrations for different fin density areas and is the same material as deposited.