The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Dec. 11, 2012
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Ying-Chieh Tsai, Chiayi, TW;

Wing-Chor Chan, Hsinchu, TW;

Jeng Gong, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7393 (2013.01);
Abstract

A semiconductor device and an operating method for the same are provided. The semiconductor structure comprises a first doped region, a second doped region, a third doped region, a fourth doped region and a first gate structure. The first doped region has a first type conductivity. The second doped region has a second type conductivity opposite to the first type conductivity. The first doped region is surrounded by the second doped region. The third doped region has the first type conductivity. The fourth doped region has the second type conductivity. The first gate structure is on the second doped region. The third doped region and the fourth doped region are in the second doped region and the first doped region on opposing sides of the first gate structure respectively.


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