Semiconductor light emitting device wherein a linear expansion coefficient of an intermediate layer is larger than a linear expansion coefficient of a first semiconductor layer and smaller than a linear expansion coefficient of a wavelength conversion layer

Abstract

According to one embodiment, a semiconductor light emitting device includes first and second columnar units, a wavelength conversion layer, a light emitting unit, a resin unit and an intermediate layer. The first columnar unit extends in a first direction. The second columnar unit is provided apart from the first columnar unit, and extends in the first direction. The wavelength conversion layer is provided apart from the first and second columnar units in the first direction. The light emitting unit includes first and second semiconductor layers, and a light emitting layer configured to emit a first light. The resin unit covers side surfaces along the first direction of the first and second columnar units and the light emitting unit, and a surface of the light emitting unit. The intermediate layer includes first and second portions, and has a thickness thinner than a peak wavelength of the first light.