The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Mar. 05, 2012
Yukio Nakabayashi, Kanagawa, JP;
Takashi Shinohe, Kanagawa, JP;
Atsuko Yamashita, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device of an embodiment includes a first conductive type silicon carbide substrate having first and second main surfaces, a first conductive type silicon carbide layer formed on the first main surface, a second conductive type first silicon carbide region formed in the silicon carbide layer, and a first conductive type second silicon carbide region formed in the first silicon carbide region. The device includes a trench penetrating through the first and second silicon carbide regions, and a second conductive type third silicon carbide region formed on a bottom and a side surface of the trench. The third silicon carbide region is in contact with the first silicon carbide region, and is formed between the trench and the silicon carbide layer. In addition, the device includes a gate insulating film formed in the trench, a gate electrode, a first electrode, and a second electrode.