The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9040431 B1

PDF
Full Text
Expired
Date of Patent:
May. 26, 2015

Filed:

Jun. 24, 2013
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Hirohisa Fujita, Saitama, JP;

Shuji Koyama, Kawasaki, JP;

Keiji Matsumoto, Kawasaki, JP;

Kenta Furusawa, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01); H01L 21/306 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 21/30608 (2013.01); H01L 21/6708 (2013.01);
Abstract

A method for processing a silicon wafer is provided. The method includes allowing an etchant to flow along a surface of the silicon wafer to form a line in which a plurality of apertures are arranged in a flow direction of the etchant from an upstream side to a downstream side. The apertures arranged in the line include a first aperture formed on the most upstream side and a second aperture formed downstream of the first aperture in the flow direction of the etchant. The first aperture and the second aperture are subjected to different processes after being formed.


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