The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Jun. 27, 2013
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
John M. Nagarah, San Jose, CA (US);
Gerardo Delgadino, Milpitas, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/02093 (2013.01);
Abstract
A method for stripping an organic mask above a porous low-k dielectric film is provided. A steady state flow of a stripping gas, comprising COand CHis provided. The stripping gas is formed into a plasma, wherein the plasma strips at least half the organic mask and protects the porous low-k dielectric film, for a duration of providing the steady state flow of the stripping gas.