The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Oct. 01, 2013
Applicant:
Spts Technologies Limited, Newport, GB;
Inventors:
Huma Ashraf, Newport, GB;
Anthony Barker, Cardiff, GB;
Assignee:
SPTS Technologies Limited, Newport, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); C23F 1/12 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
C23F 1/12 (2013.01); H01J 37/32449 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01);
Abstract
A method of plasma etching a silicon carbide workpiece includes forming a mask on a surface of the silicon carbide workpiece, performing an initial plasma etch on the masked surface using a first set of process conditions, wherein the plasma is produced using an etchant gas mixture which includes i) oxygen and ii) at least one fluorine rich gas which is present in the etchant gas mixture at a volume ratio of less than 50%, and subsequently performing a bulk plasma etch process using a second set of process conditions which differ from the first set of process conditions.