The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Aug. 21, 2012
Applicant:
Da-wei Lai, Singapore, SG;
Inventor:
Da-Wei Lai, Singapore, SG;
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/41775 (2013.01); H01L 29/0653 (2013.01); H01L 29/0696 (2013.01); H01L 29/0878 (2013.01); H01L 29/1087 (2013.01); H01L 27/027 (2013.01);
Abstract
An improved nLDMOS ESD protection device having an increased holding voltage is disclosed. Embodiments include: providing in a substrate a DVNW region; providing a HVPW region in the DVNW region; providing bulk and source regions in the HVPW region; providing a drain region in the DVNW region, separate from the HVPW region; and providing a polysilicon gate over a portion of the HVPW region and the DVNW region.