The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Aug. 31, 2012
Applicants:

Taisuke Sato, Kanagawa-ken, JP;

Kotaro Zaima, Tokyo, JP;

Jumpei Tajima, Tokyo, JP;

Naoharu Sugiyama, Kanagawa-ken, JP;

Shinya Nunoue, Chiba-ken, JP;

Inventors:

Taisuke Sato, Kanagawa-ken, JP;

Kotaro Zaima, Tokyo, JP;

Jumpei Tajima, Tokyo, JP;

Naoharu Sugiyama, Kanagawa-ken, JP;

Shinya Nunoue, Chiba-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/12 (2010.01); H01L 33/24 (2010.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 33/24 (2013.01); H01L 33/0075 (2013.01); H01L 33/0079 (2013.01); H01L 33/0095 (2013.01); H01L 33/22 (2013.01);
Abstract

According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting element. The method can include bonding a stacked main body of a structural body to a substrate main body. The structural body includes a growth substrate and the stacked main body provided on the growth substrate. The stacked main body includes a first nitride semiconductor film, a light emitting film provided on the first nitride semiconductor film, and a second nitride semiconductor film provided on the light emitting film. The method can include removing the growth substrate. The method can include forming a plurality of stacked bodies. The method can include forming an uneven portion in a surface of a first nitride semiconductor layer. The method can include forming a plurality of the semiconductor light emitting elements.


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