The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Oct. 23, 2013
Applicant:
Mitsubishi Materials Corporation, Tokyo, JP;
Inventors:
Shintaro Iida, Naka, JP;
Hideaki Sakurai, Naka, JP;
Assignee:
MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 41/39 (2013.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01); H01L 41/318 (2013.01);
U.S. Cl.
CPC ...
H01L 41/39 (2013.01); H01L 21/02197 (2013.01); H01L 21/02282 (2013.01); H01L 21/02315 (2013.01); H01L 28/55 (2013.01); H01L 28/65 (2013.01); H01L 41/318 (2013.01);
Abstract
It is possible to produce a ferroelectric thin film controlled to have the preferential crystal orientation in the (100) plane with a simple process without providing a seed layer or a buffer layer. A ferroelectric thin film is produced on a lower electrode by irradiating a surface of the lower electrode of a substrate having the lower electrode where the crystal plane is oriented in a (111) axis direction, with an atmospheric pressure plasma, coating a composition for forming a ferroelectric thin film on the lower electrode, and heating and crystallizing the coated composition.