The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Jan. 16, 2013
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/039 (2006.01); G03F 7/30 (2006.01); G03F 7/32 (2006.01); G03F 7/20 (2006.01); G03F 7/11 (2006.01); C08F 220/24 (2006.01); C07C 69/653 (2006.01); C08F 220/26 (2006.01); G03F 7/004 (2006.01); C08F 220/28 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0392 (2013.01); G03F 7/039 (2013.01); C07C 69/653 (2013.01); C08F 220/26 (2013.01); G03F 7/0046 (2013.01); G03F 7/0397 (2013.01); G03F 7/30 (2013.01); G03F 7/325 (2013.01); G03F 7/2041 (2013.01); G03F 7/11 (2013.01); C08F 220/28 (2013.01); C07C 2101/02 (2013.01); C07C 2101/04 (2013.01); C07C 2101/08 (2013.01); C07C 2101/14 (2013.01); C07C 2102/42 (2013.01); C08F 220/24 (2013.01);
Abstract
The present invention provides a polymerizable tertiary ester compound represented by the following general formula (1a) or (1b). There is provided a polymerizable ester compound useful as a monomer for a base resin of a resist composition having a high resolution and a reduced pattern edge roughness in photolithography using a high-energy beam such as an ArF excimer laser light as a light source, especially in immersion lithography, a polymer containing a polymer of the ester compound, a resist composition containing the polymer as a base resin, and a patterning process using the resist composition.