The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

May. 10, 2011
Applicants:

Kenneth E. Nauman, Fort Collins, CO (US);

Kenneth Finley, Mead, CO (US);

Skip B. Larson, Fort Collins, CO (US);

Doug Pelleymounter, Northfield, MN (US);

Inventors:

Kenneth E. Nauman, Fort Collins, CO (US);

Kenneth Finley, Mead, CO (US);

Skip B. Larson, Fort Collins, CO (US);

Doug Pelleymounter, Northfield, MN (US);

Assignee:

Advanced Energy Industries, Inc., Fort Collins, CO (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); H01J 37/34 (2006.01); C23C 14/54 (2006.01); C23C 14/56 (2006.01); H05H 1/46 (2006.01);
U.S. Cl.
CPC ...
C23C 14/54 (2013.01); C23C 14/3485 (2013.01); C23C 14/3492 (2013.01); C23C 14/542 (2013.01); C23C 14/548 (2013.01); C23C 14/564 (2013.01); H01J 37/34 (2013.01); H01J 37/3417 (2013.01); H01J 37/3429 (2013.01); H01J 37/3438 (2013.01); H01J 37/3444 (2013.01); H01J 37/3467 (2013.01); H05H 1/46 (2013.01); H05H 2001/4682 (2013.01);
Abstract

Methods and apparatus for applying pulsed DC power to a plasma processing chamber are disclosed. In some implementations, frequency of the applied power is varied to achieve desired processing effects such as deposition rate, arc rate, and film characteristics. In addition, a method and apparatus are disclosed that utilize a relatively high potential during a reverse-potential portion of a particular cycle to mitigate possible nodule formation on the target. The relative durations of the reverse-potential portion, a sputtering portion, and a recovery portion of the cycle are adjustable to effectuate desired processing effects.


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