The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Jul. 20, 2012
Applicants:

Ryota Sasajima, Toyama, JP;

Yoshiro Hirose, Toyama, JP;

Yosuke Ota, Toyama, JP;

Naonori Akae, Toyama, JP;

Kojiro Yokozawa, Toyama, JP;

Inventors:

Ryota Sasajima, Toyama, JP;

Yoshiro Hirose, Toyama, JP;

Yosuke Ota, Toyama, JP;

Naonori Akae, Toyama, JP;

Kojiro Yokozawa, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/54 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/314 (2006.01); H01L 21/316 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); C23C 16/54 (2013.01); C23C 16/402 (2013.01); C23C 16/45546 (2013.01); C23C 16/56 (2013.01); H01L 21/02181 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/0228 (2013.01); H01L 21/02337 (2013.01); H01L 21/3141 (2013.01); H01L 21/31608 (2013.01); H01L 21/31645 (2013.01);
Abstract

Provided is a substrate processing apparatus. The apparatus includes: a process vessel, a heater, a source gas supply system, an oxygen-containing gas supply system, a hydrogen-containing gas supply system, a pressure regulator, and a controller. The controller is configured to control the parts so as to perform: (a) forming an oxide film on a substrate by alternately repeating: (a-1) forming a layer by supplying a source gas into the process vessel accommodating the substrate; and (a-2) changing the layer into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, the inside of the process vessel being under a heated atmosphere having a low pressure; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, the inside of the process vessel being under the heated atmosphere having the low pressure.


Find Patent Forward Citations

Loading…