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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9035414 B1

PDFFull Text
Expired
Date of Patent:
May. 19, 2015

Filed:

Jun. 28, 2013

Compound semiconductor device and manufacturing method thereof

Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

Yuichi Minoura, Zama, JP;

Naoya Okamoto, Isehara, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:

Kratz, Quintos & Hanson, LLP

Primary Examiner:

William D Coleman

Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 21/28 (2006.01); H01L 21/44 (2006.01); H01L 29/872 (2006.01); H01L 27/08 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 27/095 (2006.01); H01L 29/20 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 27/0814 (2013.01); H01L 27/095 (2013.01); H01L 29/2003 (2013.01); H01L 29/417 (2013.01); H01L 29/42316 (2013.01); H01L 29/475 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/66143 (2013.01); H01L 21/2654 (2013.01); H01L 29/66196 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01);
Abstract

A semiconductor device includes a semiconductor layer and a Schottky electrode, a Schottky junction being formed between the semiconductor layer and the Schottky electrode. The Schottky electrode includes a metal part containing a metal, a Schottky junction being formed between the semiconductor layer and the metal part; and a nitride part around the metal part, the nitride part containing a nitride of the metal, and a Schottky junction being formed between the semiconductor layer and the nitride part.

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Minoura, Yuichi. (2015). Compound semiconductor device and manufacturing method thereof (U.S. Patent No. 9035414). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9035414

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