The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
May. 05, 2014
Andrew J. Boudreau, Washington, DC (US);
Michael K. Yetzbacher, Burke, VA (US);
Marc Christophersen, Berwyn Heights, MD (US);
Bernard F. Phlips, Great Falls, VA (US);
Andrew J. Boudreau, Washington, DC (US);
Michael K. Yetzbacher, Burke, VA (US);
Marc Christophersen, Berwyn Heights, MD (US);
Bernard F. Phlips, Great Falls, VA (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A ramped etalon cavity structure and a method of fabricating same. A bi-layer stack is deposited on a substrate. The bi-layer stack includes a plurality of bi-layers. Each bi-layer of the plurality of bi-layers includes an etch stop layer and a bulk layer. A three dimensional photoresist structure is formed by using gray-tone lithography. The three dimensional photoresist is plasma etched into the bi-layer stack, thereby generating an etched bi-layer stack. The etched bi-layer stack is chemically etched with a first chemical etchant to generate a multiple-step structure on the substrate, wherein the first chemical etchant stops at the etch stop layer.