The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Jan. 05, 2011
Applicants:

Young-soo Park, Yongin-si, KR;

Won-joo Kim, Hwaseong-si, KR;

Kyoo-chul Cho, Yongin-si, KR;

Gi-jung Kim, Yongin-si, KR;

Sam-jong Choi, Suwon-si, KR;

Inventors:

Young-soo Park, Yongin-si, KR;

Won-joo Kim, Hwaseong-si, KR;

Kyoo-chul Cho, Yongin-si, KR;

Gi-jung Kim, Yongin-si, KR;

Sam-jong Choi, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14629 (2013.01); H01L 27/14687 (2013.01);
Abstract

A three-dimensional (3D) CMOS image sensor (CIS) that sufficiently absorbs incident infrared-rays (IRs) and includes an infrared-ray (IR) receiving unit formed in a thin epitaxial film, thereby being easily manufactured using a conventional CIS process, a sensor system including the 3D CIS, and a method of manufacturing the 3D CIS, the 3D CIS including an IR receiving part absorbing IRs incident thereto by repetitive reflection to produce electron-hole pairs (EHPs); and an electrode part formed on the IR receiving part and collecting electrons produced by applying a predetermined voltage thereto.


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