The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Jun. 28, 2013
Samsung Corning Precision Materials Co., Ltd., Gumi-si, Gyeongsangbuk-do, KR;
Samsung Display Co., Ltd., Yongin, KR;
Jaewoo Park, Yongin, KR;
Yoon Gyu Lee, Asan-si, KR;
Do-Hyun Kim, Yongin, KR;
Dongjo Kim, Asan-si, KR;
Juok Park, Asan-si, KR;
Insung Sohn, Asan-si, KR;
Sangwon Yoon, Asan-si, KR;
Gunhyo Lee, Asan-si, KR;
Yongjin Lee, Asan-si, KR;
Woo-Seok Jeon, Yongin, KR;
SAMSUNG CORNING PRECISION MATERIALS CO., LTD., Gumi-si, Gyeongsangbuk-do, KR;
SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-do, KR;
SAMSUNG CORNING ADVANCED GLASS, LLC, Asan-si, Chungcheongnam-do, KR;
Abstract
A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.