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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9035295 B1

PDFFull Text
Date of Patent:
May. 19, 2015

Filed:

Apr. 05, 2011

Thin film transistor having an oxide semiconductor thin film formed on a multi-source drain electrode

Applicants:

Okifumi Nakagawa, Osaka, JP;

Yoshifumi Ohta, Osaka, JP;

Yoshimasa Chikama, Osaka, JP;

Tsuyoshi Inoue, Osaka, JP;

Masahiko Suzuki, Osaka, JP;

Michiko Takei, Osaka, JP;

Yoshiyuki Harumoto, Osaka, JP;

Yoshinobu Miyamoto, Osaka, JP;

Hinae Mizuno, Yamato, JP;

Inventors:

Okifumi Nakagawa, Osaka, JP;

Yoshifumi Ohta, Osaka, JP;

Yuuji Mizuno, Osaka, JP;

Yoshimasa Chikama, Osaka, JP;

Tsuyoshi Inoue, Osaka, JP;

Masahiko Suzuki, Osaka, JP;

Michiko Takei, Osaka, JP;

Yoshiyuki Harumoto, Osaka, JP;

Yoshinobu Miyamoto, Osaka, JP;

Assignee:

Sharp Kabushiki Kaisha, Osaka, JP;

Attorney:

Keating & Bennett, LLP

Primary Examiner:

Long K Tran

Assistant Examiner:

Dzung Tran

Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 29/10 (2006.01); H01L 29/76 (2006.01); H01L 21/00 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 27/1225 (2013.01); H01L 29/66742 (2013.01);
Abstract

A semiconductor device (A) according to the present invention includes an oxide semiconductor layer (), first and second source electrodes (and), and first and second drain electrodes (and). The second source electrode () is formed to be in contact with a top surface of the first source electrode and inner to the first source electrode (). The second drain electrode () is formed to be in contact with a top surface of the first drain electrode () and inner to the first drain electrode (). The oxide semiconductor layer () is formed to be in contact with the top surface of the first source electrode () and the top surface of the first drain electrode ().

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