The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Mar. 15, 2013
Applicant:

Polyera Corporation, Skokie, IL (US);

Inventors:

Antonio Facchetti, Chicago, IL (US);

Daniel Batzel, Skokie, IL (US);

Jing Chen, Skokie, IL (US);

Chun Huang, Skokie, IL (US);

Shaofeng Lu, Skokie, IL (US);

William Christopher Sheets, Chicago, IL (US);

Jingqi Wang, Evanston, IL (US);

Yu Xia, Skokie, IL (US);

Assignee:

Polyera Corporation, Skokie, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 51/30 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 51/0545 (2013.01); H01L 51/052 (2013.01);
Abstract

Disclosed are polysulfone-based materials that can be used as active and/or passive components in various electronic, optical, and optoelectronic devices, particularly, metal-oxide-semiconductor field-effect transistors. For example, various metal-oxide-semiconductor field-effect transistors can include a dielectric layer and/or a passivation layer prepared from such polysulfone-based materials and exhibit good device performance.


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