The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Jul. 09, 2010
Anand Chandrashekar, Sunnyvale, CA (US);
Raashina Humayun, Fremont, CA (US);
Michal Danek, Cupertino, CA (US);
Aaron R. Fellis, San Jose, CA (US);
Sean Chang, Cupertino, CA (US);
Anand Chandrashekar, Sunnyvale, CA (US);
Raashina Humayun, Fremont, CA (US);
Michal Danek, Cupertino, CA (US);
Aaron R. Fellis, San Jose, CA (US);
Sean Chang, Cupertino, CA (US);
Novellus Systems, Inc., Fremont, CA (US);
Abstract
Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials are provided. The method involves providing a partially fabricated semiconductor substrate and depositing a tungsten-containing layer on the substrate surface to partially fill one or more high aspect ratio features. The method continues with selective removal of a portion of the deposited layer such that more material is removed near the feature opening than inside the feature. In certain embodiments, removal may be performed at mass-transport limited conditions with less etchant available inside the feature than near its opening. Etchant species are activated before being introduced into the processing chamber and/or while inside the chamber. In specific embodiments, recombination of the activated species is substantially limited and/or controlled during removal, e.g., operation is performed at less than about 250° C. and/or less than about 5 Torr.