The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Aug. 10, 2012
Keisuke Suzuki, Nirasaki, JP;
Kentaro Kadonaga, Nirasaki, JP;
Yuichiro Morozumi, Nirasaki, JP;
Tokyo Electron Limited, , JP;
Abstract
Provided is a semiconductor device capable of preventing destruction of an electrode having a pillar shape and densely arranged. The semiconductor device having a field-effect transistor and a capacitor having a pillar shape, the semiconductor device includes: a first electrode having a pillar shape and electrically connected to an impurity diffusion region of the field-effect transistor; a dielectric film formed at least on a side of the first electrode; a second electrode formed on the dielectric film; and a support film extending in a direction crossing a length direction of the first electrode having the pillar shape, and formed by a boron-added silicon nitride film connected to the first electrode by penetrating through at least a part of the second electrode.