The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Nov. 19, 2014
United Microelectronics Corp., Hsin-Chu, TW;
Chih-Chung Wang, Hsinchu, TW;
Wei-Lun Hsu, Hsinchu County, TW;
Shan-Shi Huang, Hsinchu, TW;
Ke-Feng Lin, Taipei, TW;
Te-Yuan Wu, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The present invention provides a method of fabricating a HV MOS transistor device, including forming a deep well in a substrate, and the deep well; forming a first doped region in the deep well, and the first doped region, wherein a doping concentration of the first doped region and a doping concentration of the deep well in at least one electric field concentration region has a first ratio, the doping concentration of the first doped region and the doping concentration of the deep well outside the electric field concentration region has a second ratio, and the first ratio is greater than the second ratio; and forming a high voltage well in the substrate, and forming a second doped region and a third doped region respectively in the deep well and in the high voltage well.