The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Mar. 11, 2011
Eng Huat Toh, Singapore, SG;
Jae Gon Lee, Daegu, KR;
Chung Foong Tan, Yishun Sapphire, SG;
Elgin Quek, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Jae Gon Lee, Daegu, KR;
Chung Foong Tan, Yishun Sapphire, SG;
Elgin Quek, Singapore, SG;
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Abstract
An LDMOS is formed with a second gate stack over the ndrift region, having a common gate electrode with the gate stack, and having a higher work function than the gate stack. Embodiments include forming a first conductivity type well, having a source, surrounded by a second conductivity type well, having a drain, in a substrate, forming first and second gate stacks on the substrate over a portion of the first well and a portion of the second well, respectively, the first and second gate stacks sharing a common gate electrode, and tuning the work functions of the first and second gate stacks to obtain a higher work function for the second gate stack. Other embodiments include forming the first gate stack with a first high-k dielectric and the second gate stack with a second high-k dielectric, and forming the first and second gate stacks with asymmetric dielectrics.